LEC InP (100) Zn doped, 2" x 0.4mm, wafer, 1sp
InP single crystal wafer
Growing Method: LEC
Orientation: (100)
Size: 2" diameter x 0.4 mm
Doping: Zn doped
Conducting type: P
Polish: one side polished
Resistivity: (2.7-2.8)E-2 ohm.cm
Mobility: 53-60 cmE2/V.S
EPD: < 2000 /cmE2
Carrier Concerntration: (3.7-4.4) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 2" diameter x 0.4 mm
Doping: Zn doped
Conducting type: P
Polish: one side polished
Resistivity: (2.7-2.8)E-2 ohm.cm
Mobility: 53-60 cmE2/V.S
EPD: < 2000 /cmE2
Carrier Concerntration: (3.7-4.4) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
$1,895.00
LEC InP (100) Zn doped, 2" x 0.4mm, wafer, 1sp—
$1,895.00
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
InP single crystal wafer
Growing Method: LEC
Orientation: (100)
Size: 2" diameter x 0.4 mm
Doping: Zn doped
Conducting type: P
Polish: one side polished
Resistivity: (2.7-2.8)E-2 ohm.cm
Mobility: 53-60 cmE2/V.S
EPD: < 2000 /cmE2
Carrier Concerntration: (3.7-4.4) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
Orientation: (100)
Size: 2" diameter x 0.4 mm
Doping: Zn doped
Conducting type: P
Polish: one side polished
Resistivity: (2.7-2.8)E-2 ohm.cm
Mobility: 53-60 cmE2/V.S
EPD: < 2000 /cmE2
Carrier Concerntration: (3.7-4.4) E18 /cm^3
Ra(Average Roughness) : < 0.4 nm
EPI ready surface and packing
