Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (100) +/_0.5 Deg.
- Wafer Size: 1" dia x 500 microns
- Surface Polishing: one side epi polished
- Surface roughness: RMS or Ra:~ 10 A(By AFM)
- Doping: Undoped
- Conductor type: N-type
- Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
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$90.65
Original: $259.00
-65%Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm—
$259.00
$90.65Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Ge Wafer Specification
- Growing Method: CZ
- Orientation: (100) +/_0.5 Deg.
- Wafer Size: 1" dia x 500 microns
- Surface Polishing: one side epi polished
- Surface roughness: RMS or Ra:~ 10 A(By AFM)
- Doping: Undoped
- Conductor type: N-type
- Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Package: under 1000 class clean room
Typical Properties:
- Structure: Cubic, a = 5.6754 A
- Density: 5.323 g/cm3 at room temperature
- Melting Point: 937.4 oC
- Thermal Conductivity: 640
Related Product
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
