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VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US

VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US

VGF InP single crystal wafer Orientation:   (100)
Size:                                                      2" diameter x 0.35mm
Doping:                                                  Fe doped
Conducting type:                                     Semi-Insulating
Resistivity:                                              (1.96-5.15) E7 ohm.cm
Mobility:                                                 2200-2560 cmE2/V.s
EPD:                                                      <5000 /cmE2
Polish:                                                   one side polished

EPI ready surface and packing

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

$1,359.00
VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US—
$1,359.00

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Description

VGF InP single crystal wafer Orientation:   (100)
Size:                                                      2" diameter x 0.35mm
Doping:                                                  Fe doped
Conducting type:                                     Semi-Insulating
Resistivity:                                              (1.96-5.15) E7 ohm.cm
Mobility:                                                 2200-2560 cmE2/V.s
EPD:                                                      <5000 /cmE2
Polish:                                                   one side polished

EPI ready surface and packing

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

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VGF InP (100) Fe doped, 2"x0.35 mm wafer, 1sp - IPFea50D035C1US | MTI Online Store