Synthetic MoSe2, ( 2.5-3.0) mm x ( 2.0-2.5) mm x ( 0.1) mm

LSAT (110), 5x5x0.5mm, 1sp

Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 1.0 um thick

Ge Wafer (100) 2" dia x 0.4 mm, 2SP, N type (Sb doped), resistivities: 0.001-0.01 ohm-cm

Si (111) 10x10x0.5mm, 2SP, P type undoped, R>1000 ohm-cm

YAlO3 (010) 10x10x0.5mm, 1 side polished

Ge Wafe, N-type Undoped, 1" dia x 0.5 mm, 1SP (100) R: >50 Ohm.cm

LiAlO2 (001 ) 5x5x0.5mm, 1sp

Ni Single Crystal Substrate, <110>, 5x5 x 1.0 mm, 1 side polished

Ge Wafer (100) +/- 2.5 Degree Undoped, 2" dia x 0.5 mm, 1SP, Resistivities: >50 ohm-cm

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,1sp, Film: 0.6 um thick

VGF InP (100) undoped,10x10x 0.35 mm wafer, 1sp