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SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )

PSpecifications
 

Device Layer

Diameter:

 

6" 

Type/Dopant:

 

N type/P-doped

Orientation:

 

<1-0-0>+/-.5 degree

Thickness:

 

2.5±0.5µm

Resistivity:

 

1-4 ohm-cm

Finish:

Front Side Polished

 

Buried Thermal Oxide:

Thickness:

 

1.0um +/- 0.1 um

 

Handle Wafers:

Type/Dopant

P Type, B doped

Orientation

 

<1-0-0>+/-.5 degree

Resistivity:

 

10-20 ohm-cm

Thickness:

 

625 +/- 15 um

Finish:

 

As-received (not polished)



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Dicing saw

Film Coater
$115.15

Original: $329.00

-65%
SOI Wafer: 6", 2.5 "m (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )—

$329.00

$115.15

Product Information

Shipping & Returns

Description

PSpecifications
 

Device Layer

Diameter:

 

6" 

Type/Dopant:

 

N type/P-doped

Orientation:

 

<1-0-0>+/-.5 degree

Thickness:

 

2.5±0.5µm

Resistivity:

 

1-4 ohm-cm

Finish:

Front Side Polished

 

Buried Thermal Oxide:

Thickness:

 

1.0um +/- 0.1 um

 

Handle Wafers:

Type/Dopant

P Type, B doped

Orientation

 

<1-0-0>+/-.5 degree

Resistivity:

 

10-20 ohm-cm

Thickness:

 

625 +/- 15 um

Finish:

 

As-received (not polished)



Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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