Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.001-0.005ohm-cm - SiBc101D0525C1deg0R0001
- Single crystal Si,
- Conductivity: P type ( B doped)
- Resistivity: 0.001-0.005ohm-cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Size: 4" diameter x 0.525 mm
- Orientation: (111) miscut 0+/-0.5 degree,
- Polish: One side polished
- Surface roughness, Ra: < 5A (RMS)
Optional: you may need tool below to handle the wafer ( click picture to order )
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Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
$19.58
Original: $55.95
-65%Si Wafer (111) miscut 0+/-0.5 degree, 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.001-0.005ohm-cm - SiBc101D0525C1deg0R0001—
$55.95
$19.58Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Single crystal Si,
- Conductivity: P type ( B doped)
- Resistivity: 0.001-0.005ohm-cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - Size: 4" diameter x 0.525 mm
- Orientation: (111) miscut 0+/-0.5 degree,
- Polish: One side polished
- Surface roughness, Ra: < 5A (RMS)
Optional: you may need tool below to handle the wafer ( click picture to order )
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
