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MgAl2O4 (111) 5x5x0.5 mm 1 side polished - MAc050505S1

MgAl2O4 (111) 5x5x0.5 mm 1 side polished - MAc050505S1

  • MgAl2O4 single crystal substrate
  • Size: 5mm x 5mm x 0.5mm +/-0.05mm
  • Orientation: (111)  +/-0.5o
  • Polished: One side
  • Surface roughness:  < 15 A
  • Packing:  1000 class clean room  with 100 class plastic bag

MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device.  MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.  Following several year of effort, MTI is proud of being able to supply the best quality MgAl2O4 crystal in the world.   

 

Typical Physical Properties

Crystal Structure

Cubic:    a = 8.083Å

Growth Method

Czochralski

Density

3.64     g/cm3

Melt Point

2130  oC        

Hardness

8.0 ( Mohns)

Thermal expansion

 7.45  (x10-6/ oC)

 Phase Velocity

6500  m/s  at (100> shear wave

Propagation loss

6.5    dB/ms

Typical growth direction

<100>  and <110>


  • For detailed specification data sheet , please click here to download
  • For MgAl2O4 crystal rocking curve, please click here to download
  • For MgAl2O4 MSDS sheet, please click here to download
  • For the AFM of MaAl2O4 ,please click here.

Related Products:

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3  AlN template   Wafer Carriers Plasma Cleaners Film Coater
A-plane (11-20)
$17.15

Original: $49.00

-65%
MgAl2O4 (111) 5x5x0.5 mm 1 side polished - MAc050505S1

$49.00

$17.15

Product Information

Shipping & Returns

Description

  • MgAl2O4 single crystal substrate
  • Size: 5mm x 5mm x 0.5mm +/-0.05mm
  • Orientation: (111)  +/-0.5o
  • Polished: One side
  • Surface roughness:  < 15 A
  • Packing:  1000 class clean room  with 100 class plastic bag

MgAl2O4 ( spinel ) single crystals are widely used for bulk acoustic wave and microwave devices and fast IC epitaxial substrates. It is also found that MgAl2O4 is a good substrate for III-V nitrides device.  MgAl2O4 crystal is very difficult to grow, due to the difficulty in maintaining a single phase structure.  Following several year of effort, MTI is proud of being able to supply the best quality MgAl2O4 crystal in the world.   

 

Typical Physical Properties

Crystal Structure

Cubic:    a = 8.083Å

Growth Method

Czochralski

Density

3.64     g/cm3

Melt Point

2130  oC        

Hardness

8.0 ( Mohns)

Thermal expansion

 7.45  (x10-6/ oC)

 Phase Velocity

6500  m/s  at (100> shear wave

Propagation loss

6.5    dB/ms

Typical growth direction

<100>  and <110>


  • For detailed specification data sheet , please click here to download
  • For MgAl2O4 crystal rocking curve, please click here to download
  • For MgAl2O4 MSDS sheet, please click here to download
  • For the AFM of MaAl2O4 ,please click here.

Related Products:

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3  AlN template   Wafer Carriers Plasma Cleaners Film Coater
A-plane (11-20)

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