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InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished

InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished

2" InSb  wafer (N type, Undoped )

  • Size: 2" dia x 0.5 (+/- 0.025 ) mm  thick
  • Orientation:  <100> +/-0.5 o
  • Type/dopant: N-type/ Undoped
  • Surface Polishing : In(A) face   polished chemical ,final face
                                       Sb(B) face polished  Linde A0.3um ( mirror finish)
           Please click here to see which side is In(A) Face
  • Mobility: > 3.9E4 /cm^2/V.S
  • EPD:   < 200
  • Carrier Concentration: (2-7)E14 cm-3@77K
  • Growth Method: LEC
  • Packing: Sealed in nitrogen in single wafer container  at 100 class clean room

 

Related Products

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 Wafer Box

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 RTP Furnaces
$692.65

Original: $1,979.00

-65%
InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished—

$1,979.00

$692.65

Product Information

Shipping & Returns

Description

2" InSb  wafer (N type, Undoped )

  • Size: 2" dia x 0.5 (+/- 0.025 ) mm  thick
  • Orientation:  <100> +/-0.5 o
  • Type/dopant: N-type/ Undoped
  • Surface Polishing : In(A) face   polished chemical ,final face
                                       Sb(B) face polished  Linde A0.3um ( mirror finish)
           Please click here to see which side is In(A) Face
  • Mobility: > 3.9E4 /cm^2/V.S
  • EPD:   < 200
  • Carrier Concentration: (2-7)E14 cm-3@77K
  • Growth Method: LEC
  • Packing: Sealed in nitrogen in single wafer container  at 100 class clean room

 

Related Products

Other InSb

 InAs

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

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InSb (100) 2" dia x 0.5 mm, N type Undoped, 2 sides polished | MTI Online Store