Ge(111) Wafer N-type Undoped, 2" dia x 0.5 mm, 2SP R >50 Ohm.cm - GEUc50D05C2R50US

Ge Wafer Specification

• Growing Method:             CZ
• Orientation:                     (111) +/_0.5 Deg.
• Wafer Size:                      2" dia x  0.5 mm  
• Surface Finish(RMS or Ra):   Double side epi polished < 8 A ( by AFM)
• Doping:                           Undoped
• Conductor type:               N-type
• Resistivity:                       >50  Ohm.cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)     
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                       Cubic, a = 5.6754 A
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC 
• Thermal Conductivity:      640