Ge Wafer (110) 2" dia x 0.8 mm, Fine ground , N type ( Sb doped), resistivities: 0.1-0.5 ohm-cm

Ge Wafer Specification

• Growing Method:             CZ
• Orientation:                      (110)  
• Wafer Size:                      2" dia x  0.8mm
  
• Surface Polishing:            Fine ground 
• Doping:                           Sb Doped
• Conductor type:                N-type
• Resistivity:                     0.1-0.5Ohm.cm (If you would like to measure the resistivity accurately, 
                                        please order our Portable 4 Probe Resistivity Testing Instrument.)                        

Typical Properties:

• Structure:                        Cubic, a = 5.6754 A
• Density:                          5.323 g/cm3 at room temperature
• Melting Point:                  937.4 ^oC
• Thermal Conductivity:       640