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GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3

GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3

  • High quality GaSb single crystal wafers for semiconductor industries. 
  • Size: 2" diameter x 0.45mm,
  • Orientation: (100)
  • Dopping: Zn- doped,
  • Conducting type: P-type.
  • Carrier concentration:(1-3)x10^17  cm^-3
  • EPD: < 10^4 cm ^-2
  • Mobility:200-500 cm^2/V.S
  • Polish: one side polished.
  • Grown by a special LEC technique
  • Surface finish (RMS or Ra) :   < 5A 
Typical Properties
  •                 Crystal Structure:                                 cubic a = 6.095 Å
  •                 Density:                                                 5.619 g/cm3
  •                 Melting point:                                        710 oC
  •                 Thermal Expansion:                           6.1 x 10 -6 /oK
  •                 Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration
( cm-3)

Mobility
( cm2/V.Sec)

Resistivity
( ohm-cm )

EPD
(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

1.0~3.0 x 1017

200 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<100










Ralated Product

Other GaSb

 InAs

 InP 

 GaAs


 InSb

 Wafer Box

 Film Coater

 RTP Furnaces
$502.25

Original: $1,435.00

-65%
GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3—

$1,435.00

$502.25

Product Information

Shipping & Returns

Description

  • High quality GaSb single crystal wafers for semiconductor industries. 
  • Size: 2" diameter x 0.45mm,
  • Orientation: (100)
  • Dopping: Zn- doped,
  • Conducting type: P-type.
  • Carrier concentration:(1-3)x10^17  cm^-3
  • EPD: < 10^4 cm ^-2
  • Mobility:200-500 cm^2/V.S
  • Polish: one side polished.
  • Grown by a special LEC technique
  • Surface finish (RMS or Ra) :   < 5A 
Typical Properties
  •                 Crystal Structure:                                 cubic a = 6.095 Å
  •                 Density:                                                 5.619 g/cm3
  •                 Melting point:                                        710 oC
  •                 Thermal Expansion:                           6.1 x 10 -6 /oK
  •                 Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration
( cm-3)

Mobility
( cm2/V.Sec)

Resistivity
( ohm-cm )

EPD
(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

1.0~3.0 x 1017

200 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<100










Ralated Product

Other GaSb

 InAs

 InP 

 GaAs


 InSb

 Wafer Box

 Film Coater

 RTP Furnaces

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