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GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2

GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2

  • GaP single crystal wafer,
  • Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
  • Doping: S-doped,
  • Conducting type: N-type,
  • Orientation: (111)+_30'
  • Edge Orientation: (110)±1°
  • Polished:Both  sides  polished.
  • Surface finish (RMS or Ra) :  < 8A

 

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?‡3

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater
$293.65

Original: $839.00

-65%
GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2—

$839.00

$293.65

Product Information

Shipping & Returns

Description

  • GaP single crystal wafer,
  • Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
  • Doping: S-doped,
  • Conducting type: N-type,
  • Orientation: (111)+_30'
  • Edge Orientation: (110)±1°
  • Polished:Both  sides  polished.
  • Surface finish (RMS or Ra) :  < 8A

 

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?‡3

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

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GaP Wafer, S doped (111) 2"x0.5 mm, 2sp - GPSc50D05C2 | MTI Online Store