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GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 3" dia x 0.5mm 
  • Polishing: Two  sides  polished
  • Doping: Zn-doped
  • Conductor type: P-type 
  • Carrier Concentration: (1.3-1.4)E19/cm^3
  • Mobility:  71-74 cm^2/V.S
  • Ra(Average Roughness) : < 0.4 nm
  • Resistivity : (6.1-6.6)x10^-3ohm.cm
  • EPI ready surface and packing


Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces
$999.00
GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp - GAZne76D05C2US5—
$999.00

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Description

  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (110)
  • Size: 3" dia x 0.5mm 
  • Polishing: Two  sides  polished
  • Doping: Zn-doped
  • Conductor type: P-type 
  • Carrier Concentration: (1.3-1.4)E19/cm^3
  • Mobility:  71-74 cm^2/V.S
  • Ra(Average Roughness) : < 0.4 nm
  • Resistivity : (6.1-6.6)x10^-3ohm.cm
  • EPI ready surface and packing


Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

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