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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP

GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP

  • GaAs single crystal wafer
  • Growing Method:                VGF
  • Orientation:                       (100)
  • Size:                                10x10 x 0.6mm 
  • Polishing:                          one side polished; 
  •  Ra(Average Roughness) :  < 0.4 nm
  • Doping:                             undoped
  • Conductor type:                 Semi-Insulating
  • Resistivity:                        (0.6-1.1)E8 Ohm.cm
  • Mobility:                           5870-6120 cm^2/v.s.
  • EPD:                               <5000/cm2

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 Wafer Box

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$62.65

Original: $179.00

-65%
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP—

$179.00

$62.65

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Description

  • GaAs single crystal wafer
  • Growing Method:                VGF
  • Orientation:                       (100)
  • Size:                                10x10 x 0.6mm 
  • Polishing:                          one side polished; 
  •  Ra(Average Roughness) :  < 0.4 nm
  • Doping:                             undoped
  • Conductor type:                 Semi-Insulating
  • Resistivity:                        (0.6-1.1)E8 Ohm.cm
  • Mobility:                           5870-6120 cm^2/v.s.
  • EPD:                               <5000/cm2

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces






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GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.6 mm, 1SP | MTI Online Store