Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, P-type ,B-doped 1SP R:0.001- 0.005 ohm.cm
Thermal oxide Layer
-
Research Grade , about 80 % useful area
- SiO2 layer on 4" Silicon wafer
- Oxide layer thickness: 100 nm ( 2000A) +/-10%
- Refractive index - 1.455
- Conductive type: P-ype/ B-dped
- Resistivity: 0.001- 0.005 ohm.cm
- Size: 4" +/- 0.5 mm x 0.5 mm
- Orientation: (100) +/- 1o
- Polish: one side polished
- Surface roughness: < 5A
-
Optional: you may need tool below to handle the wafer ( click picture to order )
Diamond Scriber for Cutting Single Crystal Substrate - DS-01
Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001
Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C
Single Wafer Containers
$109.95
Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, P-type ,B-doped 1SP R:0.001- 0.005 ohm.cm—
$109.95
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Thermal oxide Layer
-
Research Grade , about 80 % useful area
- SiO2 layer on 4" Silicon wafer
- Oxide layer thickness: 100 nm ( 2000A) +/-10%
- Refractive index - 1.455
- Conductive type: P-ype/ B-dped
- Resistivity: 0.001- 0.005 ohm.cm
- Size: 4" +/- 0.5 mm x 0.5 mm
- Orientation: (100) +/- 1o
- Polish: one side polished
- Surface roughness: < 5A
-
Optional: you may need tool below to handle the wafer ( click picture to order )
Diamond Scriber for Cutting Single Crystal Substrate - DS-01
Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001
Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C
Single Wafer Containers
