300 nmSilicon Nitride Film (LPCVD) on Si(100), N-type, P-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm - FmSi3N4onSiPa100D0525C1FT300

Silicon Nitride Film

• Si3N4 Film coated by low stress LPCVD method
  
• Si3N4 Thickness:   300 nm  +/- 10%
• Si3N4 covers both sides of Silicon wafer
  
• Refractive Index of Si3N4: 1.95 - 2.05

Silicon Wafer Specifications:

• Conductive type:        Si   N- type, P-doped
  
• Resistivity:                 1-20 ohm-cm
• Size:                          4" diameter +/- 0.5 mm x  0.525 +/- 0.025 mm th
• Orientation:                (100) +/- 0.5^o
• Polish:                        One  side  polished
• Surface roughness:     Prime
• Packing:                      Vacuum packed on a 4" single wafer carrier box
• Optional:  you may need the tool below to handle the wafer ( click picture to order )

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